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TriQuint Semiconductor

AG201-63 Datasheet Preview

AG201-63 Datasheet

InGaP HBT Gain Block

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AG201-63
InGaP HBT Gain Block
Product Features
DC 6000 MHz
In1G1 adPB GHaBinT@G90a0inMBHlzock
+6.5 dBm P1dB @ 900 MHz
+19 dBm OIP3 @ 900 MHz
Single Voltage Supply
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-363 package
Applications
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
Product Description
Functional Diagram
The AG201-63 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG201-63 typically provides
11 dB gain, +19 dBm OIP3, and +6.5 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 C and is housed in a lead-
free/green/RoHS-compliant SOT-363 industry standard
SMT package.
The AG201-63 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
GND 1
6 RF OUT
GND 2
5 GND
RF IN 3
4 GND
Function
Input
Output/Bias
Ground
Pin No.
3
6
1, 2, 4, 5
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG201-63 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
10
Typ
900
11.3
25
16
+6.5
+19.1
+27
4.4
1900
11
+5.8
+18.5
4.0
20
Max
6000
12
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Rbias = 49.9 , 50 System.
2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
11.4
-30
-16
+6.5
+19.5
4.3
Typical
900 1900
11.3 11
-25 -20
-16 -16
+6.5 +5.8
+19.1 +18.5
4.4 4.6
2140
10.9
-15
-16
+5.1
+18.2
4.6
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
For 106 hours MTTF
Junction Temperature
Rating
-55 to +125 C
+4.5 V
+10 dBm
410 C/W
+177 C
Ordering Information
Part No.
AG201-63G
AG201-63PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 Package)
700 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 7” reel
.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 5 August 2009




TriQuint Semiconductor

AG201-63 Datasheet Preview

AG201-63 Datasheet

InGaP HBT Gain Block

No Preview Available !

AG201-63
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 49.9 , Icc = 20 mA
InGaP HBT GaFirneqBuelnoccyk
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
11.4
-30
-16
+6.5
+19.5
4.3
500
11.4
-30
-16
+6.5
+19.5
4.3
900
11.3
-25
-16
+6.5
+19.1
4.4
1900
11.0
-20
-16
+5.8
+18.5
4.6
2140
10.9
-15
-16
+5.1
+18.2
4.6
2400
10.8
-16
-16
+5.0
+17.7
4.7
3500
10.4
-18
-20
+4.1
5800
9.2
-20
-14
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.0 V, Rbias = 49.9 , Icc = 20 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
14
Return Loss
0
I-V Curve
40
12 -10 30
10 Optimal operating point
-20 20
8
6
-40 C
4
01
+25 C
2
-30 10
+85 C
-40
S11 S22
3 4 0123456
0
3.0
Frequency (GHz)
Frequency (GHz)
3.5 4.0
Device Voltage (V)
Output IP3 vs. Frequency
25
Output IP2 vs. Frequency
35
Noise Figure vs. Frequency
6
4.5
20 30
15 25
10
- 40 C
+25 C
+85 C
20
-40c +25c +85c
5 15
0 0.5 1 1.5 2 2.5 3
0 200 400 600 800 1000
Frequency (GHz)
Frequency (MHz)
P1dB vs. Frequency
10
Output Power / Gain vs. Input Power
12
frequency = 900 MHz
12
5
0
-5
-40 C +25 C +85 C
-10
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
10 Gain
8
6
4
Output Power
2
-20 -16 -12 -8 -4
Input Power (dBm)
0
8
4
0
-4
-8
4
5
4
3
2
-40 C
+25 C
+85 C
1
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Output Power / Gain vs. Input Power
10
frequency = 2000 MHz
12
8 Gain
8
64
40
2
Output Power
0
-20 -16 -12 -8 -4
Input Power (dBm)
0
-4
-8
4
.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 5 August 2009


Part Number AG201-63
Description InGaP HBT Gain Block
Maker TriQuint Semiconductor
Total Page 5 Pages
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