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TriQuint Semiconductor

AG602-89G Datasheet Preview

AG602-89G Datasheet

InGaP HBT Gain Block

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Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
WCDMA / LTE
AG602-89G
InGaP HBT Gain Block
AG602G
SOT-89 Package
Product Features
DC – 3500 MHz
+18.5 dBm P1dB at 900 MHz
+33 dBm OIP3 at 900 MHz
14 dB Gain at 900 MHz
Single Voltage Supply
SOT-89 package
Internally matched to 50
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / VCC
General Description
The AG602-89G is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 900 MHz, the AG602-89 typically
provides 14 dB of gain, +33 dBm OIP3, and +18.5 dBm
P1dB. The device combines dependable performance
with consistent quality to maintain MTTF values
exceeding 1000 years at mounting temperatures of +85
°C and is housed in a lead-free/green/RoHS-compliant
SOT-89 industry-standard SMT package.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / VCC
GND
The AG602-89G consists of Darlington pair amplifiers
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GSM, CDMA, W-CDMA and LTE.
In addition, the AG602-89 will work for other various
applications within the DC to 3.5 GHz frequency range
such as CATV.
Ordering Information
Part No.
Description
AG602-89G
InGaP/GaAs HBT Gain Block
AG602-89PCB
700-2400 MHz Evaluation Board
Standard T/R size = 3000 pieces on a 13” reel
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

AG602-89G Datasheet Preview

AG602-89G Datasheet

InGaP HBT Gain Block

No Preview Available !

AG602-89G
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
55 to 150°C
RF Input Power, CW, 50Ω, T=25°C
+10 dBm
Device Voltage (VCC)
+7 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
TCASE
Tj for >106 hours MTTF
Min
40
Typ
Max Units
+85 °C
+177 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VSUPPLY=+6V, RBIAS=11.2 Ω, ICC =75 mA (typ.), TCASE= +25°C, 50Ω system
Parameter
Conditions
Min Typ Max
Operational Frequency Range
DC 3500
Gain
f=900 MHz
14.2
f=1900 MHz 12.6 13.6 14.6
Input Return Loss
13
Output Return Loss
15
Output P1dB
f=900 MHz
f=1900 MHz
+18.7
+18.4
Output IP3
Pout=+2 dBm/tone,
Δf= 10 MHz
f=900 MHz
f=1900 MHz
+33.1
+33.0
Output IP2
+47
Noise Figure
4.4
Device Voltage (VCC)
5.16
Device Current (ICC)
Thermal Resistance, (θjc)
Junction to case(1)
75
154
Notes:
1. Thermal path is from the device junction to the backside paddle.
Units
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dB
V
mA
°C/W
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 2 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number AG602-89G
Description InGaP HBT Gain Block
Maker TriQuint Semiconductor
Total Page 9 Pages
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