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TriQuint Semiconductor

AG603-89G Datasheet Preview

AG603-89G Datasheet

InGaP HBT Gain Block

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Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
WCDMA / LTE
AG603-89G
InGaP HBT Gain Block
AG603G
SOT-89 Package
Product Features
DC – 3000 MHz
+19.5 dBm P1dB at 900 MHz
+33 dBm OIP3 at 900 MHz
18.5 dB Gain at 900 MHz
Single Voltage Supply
SOT-89 package
Internally matched to 50
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / VCC
General Description
The AG603-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG603-89 typically provides
18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
housed in a lead-free/green/RoHS-compliant SOT-89
industry-standard SMT package.
The AG603-89 consists of Darlington pair amplifiers
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GSM, CDMA, W-CDMA and LTE.
In addition, the AG603-89 will work for other applications
within the DC to 3 GHz frequency range such as CATV.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / VCC
GND
Ordering Information
Part No.
Description
AG603-89G
InGaP/GaAs HBT Gain Block
AG603-89PCB
0.7-2.4 GHz Evaluation Board
Standard T/R size = 3000 pieces on a 13” reel
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

AG603-89G Datasheet Preview

AG603-89G Datasheet

InGaP HBT Gain Block

No Preview Available !

Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
55 to 150°C
RF Input Power, CW, 50Ω, T=25°C
+10 dBm
Device Voltage (VCC)
+7 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
AG603-89G
InGaP HBT Gain Block
Recommended Operating Conditions
Parameter
TCASE
Tj for >106 hours MTTF
Min
40
Typ
Max Units
+85 °C
+177 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VSUPPLY=+6V, RBIAS=11.2 Ω, ICC =75 mA (typ.), TCASE= +25°C, 50Ω system
Parameter
Conditions
Min Typ Max
Operational Frequency Range
DC 3500
Gain
f=900 MHz
18.5
f=1900 MHz 15.5 16.5 17.5
Input Return Loss
18
Output Return Loss
14
Output P1dB
f=900 MHz
f=1900 MHz
+19.3
+18.7
Output IP3
Pout=+2 dBm/tone,
Δf= 10 MHz
f=900 MHz
f=1900 MHz
+33.2
+33.0
Output IP2
+45
Noise Figure
3.9
Device Voltage (VCC)
5.16
Device Current (ICC)
Thermal Resistance, (θjc)
Junction to case(1)
75
154
Notes:
1. Thermal path is from the device junction to the backside ground paddle.
Units
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dB
V
mA
°C/W
Datasheet: Rev A 9/5/13
© 2013 TriQuint
- 2 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number AG603-89G
Description InGaP HBT Gain Block
Maker TriQuint Semiconductor
Total Page 9 Pages
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