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TriQuint Semiconductor

AH101-G Datasheet Preview

AH101-G Datasheet

High Linearity Amplifier

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Applications
Mobile Infrastructure
CATV / DBS
Defense / Homeland Security
Product Features
50 – 1500 MHz
+47 dBm Output IP3
13.5 dB Gain
+26.5 dBm P1dB
MTTF > 1000 Years
Internally Matched
Single +9 V Supply
Lead-free/RoHS-compliant SOT-89 Package
AH101-G
Medium Power, High Linearity Amplifier
AH101
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The AH101-G is a medium power gain block that offers
excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage
and an internally matched device makes it ideal for both
narrow and broadband applications. Only dc blocking
and bypass capacitors as well as an RF choke are
required for operation.
Superior thermal design allows the product to achieve
+46 dBm IP3 performance at a mounting temperature of
+85°C with an associated MTTF of greater than 1000
years.
This broadband amplifier uses a high reliability GaAs
MESFET technology and is targeted for applications
where high linearity is required. The AH101-G is
available in the environmentally-friendly green/RoHS-
compliant SOT-89 package.
Pin Configuration
Pin No.
1
3
2, 4
Label
RF In
RF Out
GND
Not Recommended for
New Designs
Recommended Replacement Part:
TQP7M9102
Datasheet: Rev B 08-12-13
© 2013 TriQuint
Ordering Information
Part No.
AH101-G
Description
Med. Power High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel
- 1 of 7 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

AH101-G Datasheet Preview

AH101-G Datasheet

High Linearity Amplifier

No Preview Available !

Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
55 to 150°C
RF Input Power, CW, 50Ω, T=25°C +18 dBm
Supply Voltage (VDD)
+11 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
AH101-G
Medium Power, High Linearity Amplifier
Recommended Operating Conditions
Parameter
Min Typ Max Units
Supply Voltage (VDD)
7 9 10 V
TCASE
Tj for >106 hours MTTF
40
+85
+160
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VDD =+9V, Temp= +25°C, 50 Ω system.
Parameter
Conditions
Min
Operational Frequency Range
50
Test Frequency
Gain
12
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Pout = +8 dBm/tone, ∆f = 10 MHz
+43
Noise Figure
Current, IDD
Thermal Resistance, θjc
Junction to backside ground paddle
170
Typ
800
13.5
20
15
+26.5
+47
3.5
200
Max
1500
16
230
25
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
°C/W
S-Parameters
Test Conditions: VDD=+9 V, IDD=200 mA (typ.), T=+25°C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB)
50
-18.92
-60.71
13.78
168.24
-19.25
4.11
-14.51
100
-22.31
-52.06
13.63
169.87
-19.13
0.17
-14.86
200
-23.85
-47.09
13.50
166.42
-19.17
-5.09
-15.22
400
-23.32
-62.31
13.48
157.06
-19.28
-12.63
-14.83
600
-21.73
-77.34
13.32
146.40
-19.36
-19.07
-14.55
800
-20.76
-90.04
13.19
135.74
-19.47
-25.94
-14.02
1000
-19.65
-105.39
13.05
124.67
-19.74
-33.10
-13.40
1200
-18.62
-121.62
12.94
114.96
-20.07
-39.77
-12.95
1400
-17.32
-131.81
12.76
104.01
-20.36
-45.37
-12.44
1600
-16.53
-141.33
12.55
93.98
-20.44
-53.24
-12.02
S22 (ang)
-160.07
-177.29
164.61
140.14
118.64
97.71
80.17
63.09
47.65
31.14
Datasheet: Rev B 08-12-13
© 2013 TriQuint
- 2 of 7 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number AH101-G
Description High Linearity Amplifier
Maker TriQuint Semiconductor
Total Page 7 Pages
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