• Part: CGB241
  • Description: 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
  • Manufacturer: TriQuint Semiconductor
  • Size: 392.85 KB
Download CGB241 Datasheet PDF
TriQuint Semiconductor
CGB241
CGB241 is 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier manufactured by TriQuint Semiconductor.
Description : The CGB241 Ga As Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 d Bm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications. Features : - 2-stage Bluetooth In Ga P HBT power amplifier - Single voltage supply - Wide operating voltage range 2.0 - 5.5 V - POUT = 22.5 d Bm at VC = 3.2 V - Overall power added efficiency ( PAE ) typically 50% - Analog power control with four power steps - High PAE at low- power mode - High harmonic suppression typ. 35 d Bc - Easy external matching concept - Thin Small Leadless Package (A = 2.6mm2) Applications: - Bluetooth Class 1 - Home RF - Cordless Phones - IEEE 802.11b - ISM-band Spread Spectrum Package Outline: Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND For further information please visit .triquint. Rev. A; November 14th, 2005. pg. 1/14 Data Sheet 2-Stage Bluetooth & WLAN In Ga P HBT Power Amplifier Absolute Maximum Ratings Parameter Symbol Limit Values Unit min. max. Max. Supply Voltage VCC,MAX 0 5.5 V Max. Control Voltage VCTR,MAX 3.2...