CGB241
CGB241 is 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier manufactured by TriQuint Semiconductor.
Description
:
The CGB241 Ga As Power Amplifier MMIC has been especially developed for wireless applications in the 2.4
- 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 d Bm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications.
Features
:
- 2-stage Bluetooth In Ga P HBT power amplifier
- Single voltage supply
- Wide operating voltage range 2.0
- 5.5 V
- POUT = 22.5 d Bm at VC = 3.2 V
- Overall power added efficiency ( PAE ) typically 50%
- Analog power control with four power steps
- High PAE at low- power mode
- High harmonic suppression typ. 35 d Bc
- Easy external matching concept
- Thin Small Leadless Package (A = 2.6mm2)
Applications:
- Bluetooth Class 1
- Home RF
- Cordless Phones
- IEEE 802.11b
- ISM-band Spread
Spectrum
Package Outline:
Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND
For further information please visit .triquint. Rev. A; November 14th, 2005. pg. 1/14
Data Sheet
2-Stage Bluetooth & WLAN In Ga P HBT Power Amplifier
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit min. max.
Max. Supply Voltage
VCC,MAX 0 5.5 V
Max. Control Voltage
VCTR,MAX
3.2...