rf power transistor.
* Operating Frequency Range: DC to 4 GHz
* Operating Drain Voltage: 48 V
* Maximum Output Power (PSAT): 49 W
* Maximum Drain Efficiency: 72.5%
* Effic.
* W-CDMA / LTE
* Macrocell Base Station Driver
* Microcell Base Station
* Small Cell Final Stage
* A.
The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.
The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small ce.
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