Datasheet Details
| Part number | QPD0030 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 461.67 KB |
| Description | RF Power Transistor |
| Datasheet |
 QPD0030 Datasheet
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General Description
The QPD0030 is a wide band over-molded QFN discrete power amplifier.
The device is a single stage unmatched power amplifier transistor.
The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.
Key Features
- Operating Frequency Range: DC to 4 GHz.
- Operating Drain Voltage: 48 V.
- Maximum Output Power (PSAT): 49 W.
- Maximum Drain Efficiency: 72.5%.
- Efficiency-Tuned P3dB Gain: 21.7 dB.
- Surface Mount Plastic Overmold package Functional Block Diagram General.
