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QPD0050 - RF Power Transistor

General Description

The QPD0050 is a wide band over-molded QFN discrete power amplifier.

The device is a single stage unmatched power amplifier transistor.

The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.

Key Features

  • Operating Frequency Range: DC to 3.6 GHz.
  • Operating Drain Voltage: 48 V.
  • Maximum Output Power (PSAT): 82.8 W at 2.6 GHz.
  • Maximum Drain Efficiency: 78.5% at 2.6 GHz.
  • Efficiency-Tuned P3dB Gain: 19.4 dB at 2.6 GHz.
  • Surface Mount Plastic Package Functional Block Diagram General.

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Datasheet Details

Part number QPD0050
Manufacturer TriQuint Semiconductor
File Size 720.78 KB
Description RF Power Transistor
Datasheet download datasheet QPD0050 Datasheet

Full PDF Text Transcription for QPD0050 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD0050. For precise diagrams, and layout, please refer to the original PDF.

Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications QPD0050 75 W...

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nal Stage • Active Antenna • General Purpose Applications QPD0050 75 W, DC to 3.6 GHz 48V GaN RF Power Transistor 6 Pin 7.2x6.6mm DFN Product Features • Operating Frequency Range: DC to 3.6 GHz • Operating Drain Voltage: 48 V • Maximum Output Power (PSAT): 82.8 W at 2.6 GHz • Maximum Drain Efficiency: 78.5% at 2.6 GHz • Efficiency-Tuned P3dB Gain: 19.4 dB at 2.6 GHz • Surface Mount Plastic Package Functional Block Diagram General Description The QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.

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