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TriQuint Semiconductor

T1P3002028-SP Datasheet Preview

T1P3002028-SP Datasheet

PowerbandTM pHEMT RF Power Transistor

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T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3002028-SP is a POWERBANDTM discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 20watts across
the entire band when operated in the TriQuint wide-band test
xture. The T1P3002028-SP can also be used in narrow band ap-
plications and is rated at 26Watts P1dB at 2GHz.
Figure 1. Available Packages
— Narrow Band up to 2GHz
— 12dB gain
— 58% eciency
— 26Watt P1dB
Table 1. Maximum Ratings
Sym Parameter
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
l+ Positive Supply Current
| lG |
PD
TCH
Gate Supply Current
Power Dissipation
Operating Channel Temperature
Value
28 V
–5V to 0V
5.6A
70 mA
See note 3
150o C
Notes
2/
2/
2/ 3/
4/
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Features
— Pulse Characterization
— Exceptional Instantaneous band-width performance from
500MHz – 2GHz
— Increased eciency results in signicant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Eciency
— 20Watt P1dB
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junction operating temperature will directly aect the device
median time to failure(TM). For maximum life, it is recom-
mended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Test Conditions TCH θJC TM
(°C) (°C/W) (HRS)
θJC Thermal Resis- Vd = 10 V
tance (channel to Idq = 900 mA
backside of carrier) Pdiss = 9 W
145 8.3 1.6E+6
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband




TriQuint Semiconductor

T1P3002028-SP Datasheet Preview

T1P3002028-SP Datasheet

PowerbandTM pHEMT RF Power Transistor

No Preview Available !

T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specied: TA = 25 °C.
Table 3. dc Characteristics
Parameter
Saturated Drain Current
Transconductance
Pinch-oVoltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Symbol Min Typ Max Unit
Idss
— 2500 —
mA
Gm
— 2000 —
mS
VP -1.5 -1 -0.6 V
VBGS -40 — -30
V
VBGD -45 — -35
V
Table 4. RF Characteristics
Parameter
Symbol Min Typ Max Unit
Functional Tests, Instantaneous Band-Width 100uS, 10% (Tested in TriQuint’s Wide-Band Test Fixture)
Gain @ P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
G — 10 — dB
P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
P1dB
— 20 —
W
Power Added Eciency, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
— 45 —
%
Functional Tests, Narrow Band RF Performance 100uS, 10% (2GHz)
Gain
(VDS = 28 V, POUT = 26 W, IDQ = 240 mA)
G — 12 — dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 240 mA)
P1dB
— 26 —
W
Drain Eciency
www(V.DDaSta=S2he8eVt4,UP.OcoUmT = P1dB, IDQ = 240 mA)
Ruggedness
(VDS = 28 V, POUT = 26 W, IDQ =240 mA, f = 500 MHz,
VSWR = 3:1, all angles)
— 58 —
%
— No degradation in output power.
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband


Part Number T1P3002028-SP
Description PowerbandTM pHEMT RF Power Transistor
Maker TriQuint Semiconductor
Total Page 7 Pages
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