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TGA2214 - 2 to 18 GHz 5W GaN Power Amplifier

General Description

TriQuint’s TGA2214 is a wideband power amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process.

18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency .

Key Features

  • Frequency Range: 2 - 18 GHz.
  • Pout: > 37 dBm at PIN = 23 dBm.
  • PAE: > 20 % at Pin = 23 dBm.
  • Large Signal Gain (Pin = 23 dBm): > 14 dB.
  • Small Signal Gain: > 22 dB.
  • Return Loss: > 7 dB.
  • Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical.
  • Chip Dimensions: 3 x 5 x 0.10 mm.
  • Performance under CW operation Functional Block Diagram 23 1 65 4 General.

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Datasheet Details

Part number TGA2214
Manufacturer TriQuint Semiconductor
File Size 418.15 KB
Description 2 to 18 GHz 5W GaN Power Amplifier
Datasheet download datasheet TGA2214 Datasheet

Full PDF Text Transcription for TGA2214 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGA2214. For precise diagrams, and layout, please refer to the original PDF.

Applications  Test Equipment  Electronic Warfare  Military Radar TGA2214 2 to 18 GHz 5W GaN Power Amplifier Product Features  Frequency Range: 2 - 18 GHz  Pout: > 37...

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Amplifier Product Features  Frequency Range: 2 - 18 GHz  Pout: > 37 dBm at PIN = 23 dBm  PAE: > 20 % at Pin = 23 dBm  Large Signal Gain (Pin = 23 dBm): > 14 dB  Small Signal Gain: > 22 dB  Return Loss: > 7 dB  Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical  Chip Dimensions: 3 x 5 x 0.10 mm  Performance under CW operation Functional Block Diagram 23 1 65 4 General Description TriQuint’s TGA2214 is a wideband power amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process. The TGA2214 operates from 2 – 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% pow