TGA2216-SM - 10W GaN Power Amplifier

TriQuint Semiconductor

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Datasheet Details

Part number	TGA2216-SM
Manufacturer	TriQuint Semiconductor
File Size	762.19 KB
Description	10W GaN Power Amplifier
Datasheet	TGA2216-SM-TriQuintSemiconductor.pdf

TGA2216-SM Product details

Description

Pad Configuration TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.The cascode configuration offers exceptional wideband performance as well as supporting 40V operation.The TGA2216-SM operates from 0.1 - 3.0GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency.The TGA2216-SM is available in a low-cost, surface mount 32 lead 5x5 AIN

Features

Frequency Range: 0.1.
3.0GHz.
PSAT: >40dBm at PIN = 27dBm.
P1dB: >35dBm.
PAE: 50% @ midband.
Large Signal Gain: >13dB.
Small Signal Gain: 21dB.
Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical.
Wideband Flat Gain and Power.
Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Descri.

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Published: Sep 30, 2016 |