• Part: TGA2512-SM
  • Description: Wideband LNA
  • Manufacturer: TriQuint Semiconductor
  • Size: 309.80 KB
TGA2512-SM Datasheet (PDF) Download
TriQuint Semiconductor
TGA2512-SM

Description

NC RF Input RF Output Vd Vctrl Gnd Self Bias 2 8 10 11 13 Self Bias: Vd = 5V (Id = ~90mA), Vctrl = 0 to +5V for Gain adjustment Pin Description NC RF Input RF Output Vd Vctrl Vg Gnd Gate Bias 1,3, 4, 5, 6, 7, 9 2 8 10 11 12 13 Gate Bias: Vd = 5V , Vctrl = 0 to.

Key Features

  • TGA2512-SM Typical Frequency Range: 4 - 14 GHz 2.3 dB Nominal Noise Figure 25 dB Nominal Gain 15 dB AGC Range 13 dBm Nominal P1dB 24dBm Nominal OIP3 Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias Package Dimensions: 4.0 x 4.0 x 0.9 mm Self Bias Gate Bias * *
  • Primary Applications X-Band Radar EW, ECM Point-to-Point Radio Product Description The TriQuint TGA2512-SM is a packaged Xband balanced LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. The TGA2512-SM provides excellent noise performance with typical midband NF of 2.3dB, and high gain, 25dB from 4-14GHz The TGA2512-SM is designed for maximum ease of use. TGA2512-SM can handle up to 21dBm input power reliably, while the build-in gain control provides 15dB of typical gain control range. The part can be used in selfbiased mode, with a single +5V supply connection, or in gate biased mode, allowing the user to control the current for a particular application. In self-biased mode the TGA2512-SM achieves 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 13dBm. Lead-Free & RoHS compliant. Evaluation boards are available. Measured Data Bias Conditions: Self Bias, Vd = 5V, Id = 90mA 30 6 Spar & NF (dB)