900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






TriQuint Semiconductor

TGA2512-SM Datasheet Preview

TGA2512-SM Datasheet

Wideband LNA

No Preview Available !

Advance Product Information
January 26, 2006
4 - 14 GHz balanced LNA
Self Bias
Gate Bias
TGA2512-SM
Key Features
• Typical Frequency Range: 4 - 14 GHz
• 2.3 dB Nominal Noise Figure
• 25 dB Nominal Gain
• 15 dB AGC Range
• 13 dBm Nominal P1dB
• 24dBm Nominal OIP3
• Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
• Package Dimensions:
4.0 x 4.0 x 0.9 mm
Primary Applications
• X-Band Radar
• EW, ECM
• Point-to-Point Radio
Product Description
Measured Data
The TriQuint TGA2512-SM is a packaged X-
band balanced LNA with AGC amplifier for EW,
ECM, and RADAR receiver or driver amplifier
applications. The TGA2512-SM provides
excellent noise performance with typical
midband NF of 2.3dB, and high gain, 25dB from
4-14GHz
The TGA2512-SM is designed for maximum
ease of use. TGA2512-SM can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part can be used in self-
biased mode, with a single +5V supply
connection, or in gate biased mode, allowing
the user to control the current for a particular
application.
In self-biased mode the TGA2512-SM achieves
6dBm typical P1dB, while in gate-biased mode
the typical P1dB is over 13dBm.
Bias Conditions: Self Bias, Vd = 5V, Id = 90mA
30 6
Gain
20 5
10 4
0 NF 3
-10
-20
-30
4
IRL
56
ORL
7 8 9 10 11
Frequency (GHz)
12 13
2
1
0
14
Bias Conditions: Gate Bias, Vd = 5V, Id = 160mA
30
Gain
6
20 5
10 4
0 NF 3
Lead-Free & RoHS compliant.
Evaluation boards are available.
-10 IRL
-20
ORL
2
1
-30 0
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com




TriQuint Semiconductor

TGA2512-SM Datasheet Preview

TGA2512-SM Datasheet

Wideband LNA

No Preview Available !

Advance Product Information
January 26, 2006
TGA2512-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
TCASE
Drain Voltage
Gate Voltage Range
Drain Current (gate biased)
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Package Operating Temperature
[3.5 + (0.0125)(Id)] V
-1 TO +0.5 V
240 mA
7.04 mA
21 dBm
See note 4/
117 0C
260 0C
-65 to 150 0C
-40 to 110 0C
2/ 3/
2/
2/
5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Unit for Id is A
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (117 0C – TBASE 0C) / θJC (0C/W)
Where TBASE is the base plate temperature.
θJC for self bias is 28.2 0C/W
θJC for gate bias is 37.6 0C/W
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Part Number TGA2512-SM
Description Wideband LNA
Maker TriQuint Semiconductor
PDF Download

TGA2512-SM Datasheet PDF






Similar Datasheet

1 TGA2512-SM Wideband LNA
TriQuint Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy