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TriQuint Semiconductor

TGA2513-SM Datasheet Preview

TGA2513-SM Datasheet

Wideband LNA

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Advance Product Information
January 19, 2006
2-20 GHz LNA with AGC
TGA2513-SM
Key Features
• Frequency Range: 2-20 GHz
• 17 dB Nominal Gain
• > 30 dB Adjustable Gain with Vg2
• 16 dBm Nominal P1dB
• 2.5 dB Midband Noise Figure
• Bias Conditions: Vd=5V, Idq=75 mA, Vg2=2V
• Package Dimensions: 4.0 x 4.0 x 0.9 mm
Product Description
The TriQuint TGA2513-SM is a
packaged LNA/Gain Block with > 30 dB
AGC via the control gate. The LNA
operates from 2-20 GHz and is designed
using TriQuint’s proven standard 0.15
um gate pHEMT production process.
The TGA2513-SM provides a nominal 16
dBm of output power at 1 dB gain
compression with a small signal gain of
17 dB. Typical noise figure is < 3 dB
from 2-15 GHz.
The TGA2513-SM is suitable for a
variety of wideband electronic warfare
systems such as radar warning
receivers, electronic counter measures,
decoys, jammers and phased array
systems.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant
Primary Applications
• Wideband Gain Block / LNA
• X-Ku Point to Point Radio
• IF & LO Buffer Applications
Measured Performance
Bias Conditions: Vd = 5 V, Idq =75 mA, Vg2 = 2V
21
18
15
12
9
6
3
0
-3
-6
-9
-12
-15
-18
-21
2
Output
Input
46
Gain
28
24
20
16
12
8
4
0
-4
-8
-12
-16
-20
-24
-28
8 10 12 14 16 18 20
Frequency (GHz)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com




TriQuint Semiconductor

TGA2513-SM Datasheet Preview

TGA2513-SM Datasheet

Wideband LNA

No Preview Available !

www.DataSheet4U.com
Advance Product Information
January 19, 2006
TGA2513-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
V+ Positive Supply Voltage
Vg1 Gate 1 Supply Voltage Range
Vg2 Gate 2 Supply Voltage Range
I+ Positive Supply Current
| IG | Gate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
VALUE
7V
-2V TO 0 V
-0.5 V TO +3.5 V
151 mA
10 mA
21 dBm
See note 3
117 °C
260 °C
-65 to 117 °C
NOTES
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (117 °C – TBASE °C) / 32 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Part Number TGA2513-SM
Description Wideband LNA
Maker TriQuint Semiconductor
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