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TGA2590-CP - 30W GaN Power Amplifier

General Description

TriQuint's TGA2590-CP is a wideband MMIC power amplifier fabricated on TriQuint's production 0.25um GaN on SiC process.

The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power with >22dB of large signal gain and >30% power-added efficiency.

Key Features

  • Frequency Range: 6 - 12 GHz.
  • POUT: > 45 dBm (PIN = 23 dBm).
  • PAE: > 30 % (PIN = 23 dBm).
  • Small Signal Gain: 35 dB.
  • Bias: VD = 20 V (CW), IDQ = 2 A, VG =.
  • 2.4 V typ.
  • Package Dimensions: 15.24 x 15.24 x 3.5 mm Functional Block Diagram 1 10 29 38 47 56 General.

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Datasheet Details

Part number TGA2590-CP
Manufacturer TriQuint Semiconductor
File Size 868.43 KB
Description 30W GaN Power Amplifier
Datasheet download datasheet TGA2590-CP Datasheet

Full PDF Text Transcription for TGA2590-CP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGA2590-CP. For precise diagrams, and layout, please refer to the original PDF.

Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  POUT: > ...

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er Amplifier Product Features  Frequency Range: 6 - 12 GHz  POUT: > 45 dBm (PIN = 23 dBm)  PAE: > 30 % (PIN = 23 dBm)  Small Signal Gain: 35 dB  Bias: VD = 20 V (CW), IDQ = 2 A, VG = −2.4 V typ.  Package Dimensions: 15.24 x 15.24 x 3.5 mm Functional Block Diagram 1 10 29 38 47 56 General Description TriQuint's TGA2590-CP is a wideband MMIC power amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power with >22dB of large signal gain and >30% power-added efficiency.