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TGA2623 Datasheet GaN Power Amplifier

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number TGA2623
Manufacturer TriQuint Semiconductor
File Size 518.99 KB
Description GaN Power Amplifier
Download TGA2623 Download (PDF)

General Description

TriQuint’s TGA2623 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

The TGA2623 operates from 10 – 11GHz and provides a superior combination of power, gain and efficiency.

Achieving 35W of saturated output power with 27.5dB of large signal gain and 47% poweradded efficiency, the TGA2623 provides the level of performance demanded by today’s system architectures.

Overview

Applications  X-band radar TGA2623 10 – 11GHz 35W GaN Power Amplifier.

Key Features

  • Frequency Range: 10.
  • 11GHz.
  • PSAT: 45.5dBm @ PIN = 18dBm.
  • P1dB: 41dBm @ Midband.
  • PAE: >47% @ PIN = 18dBm.
  • Large Signal Gain: 27.5dB.
  • Small Signal Gain: 35dB.
  • Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical.
  • Pulsed VD: PW = 100us and DC = 10%.
  • Chip Dimensions: 5.0 x 4.86 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General.

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