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TriQuint Semiconductor

TGA4522 Datasheet Preview

TGA4522 Datasheet

Wide Band Driver Amplifier

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Advance Product Information
September 21, 2005
33 - 47 GHz Wide Band Driver Amplifier
TGA4522
Key Features
• Frequency Range: 33 - 47 GHz
• 27.5 dBm Nominal Psat @ 38GHz
• 27 dBm P1dB @ 38 GHz
• 36 dBm OTOI @ Pin = 19 dBm/Tone
• 18 dB Nominal Gain @ 38GHz
• 15 dB Nominal Return Loss @ 38GHz
• Bias: 6 V @ 400 mA Idq
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.00 x 1.45 x 0.10 mm
(0.079 x 0.057 x 0.004 in)
Primary Applications
• Digital Radio
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Military SAT-COM
www.DataSheet4U.com Product Description
The TriQuint TGA4522 is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
0.15um power pHEMT production process.
The TGA4522 nominally provides 27.5 dBm
saturated output power, and 27 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 18 dB, and return loss of 15 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4522 is 100% DC and RF tested on-wafer
to ensure performance compliance.
Lead-Free & RoHS compliant.
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
25
20
15
10
5
0
-5
-10
-15 ORL
-20
-25
Gain
IRL
32 34 36 38 40 42 44 46 48
Frequency (GHz)
30
29
28 Psat
27 P1dB
26
25
24
23
22
32 34 36 38 40 42 44 46 48
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com




TriQuint Semiconductor

TGA4522 Datasheet Preview

TGA4522 Datasheet

Wide Band Driver Amplifier

No Preview Available !

Advance Product Information
September 21, 2005
TGA4522
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
8V
-2 TO 0 V
700 mA
16 mA
23 dBm
See note 4/
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W)
Where TBASE is the base plate temperature.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Part Number TGA4522
Description Wide Band Driver Amplifier
Maker TriQuint Semiconductor
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TGA4522 Datasheet PDF






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