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TriQuint Semiconductor

TGA4532-SM Datasheet Preview

TGA4532-SM Datasheet

K-Band Power Amplifier

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TGA4532-SM
K-Band Power Amplifier
Applications
Point-to-Point Radio
K-band Sat-Com
Product Features
Frequency Range: 17.7 – 19.7 GHz
Power: 32.5 dBm Psat, 31 dBm P1dB
Gain: 23 dB
TOI: 41 dBm at 20 dBm/tone
NF: 7 dB
Integrated Power Detector
Bias: Vd = 6 V, Idq = 900 mA, Vg = -0.68 V
Typical
Package Dimensions: 4.0 x 4.0 x 0.85 mm
QFN 4x4 mm 20L
Functional Block Diagram
20 19 18 17 16
1 15
2 14
3 13
4 12
5 11
General Description
The TriQuint TGA4532-SM is a K-Band Power
Amplifier. The TGA4532-SM operates from 17.7 - 19.7
GHz and is designed using TriQuint’s power pHEMT
production process.
The TGA4532-SM typically provides 32.5 dBm of
saturated output power with small signal gain of 23 dB.
The TGA4532-SM is available in a low-cost, surface
mount 20 lead 4x4 QFN package and is ideally suited for
Point-to-Point Radio.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
www.DataSheet.net/
678
Pin Configuration
9 10
Pin #
1, 3, 4, 5, 6, 10, 11, 13,
14, 20
2
7, 19
8, 18
12
9, 17
15
16
Symbol
N/C
RF IN
Vg
GND
RF OUT
Vd
Vdet
Vref
Ordering Information
Part No. ECCN Description
TGA4532-SM 3A001.b.2.c K-Band Power Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
V
Preliminary Data Sheet: Rev E 04/27/2012
© 2012 TriQuint Semiconductor, Inc.
`
- 1 of 13 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

TGA4532-SM Datasheet Preview

TGA4532-SM Datasheet

K-Band Power Amplifier

No Preview Available !

TGA4532-SM
K-Band Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30
Seconds)
Storage Temperature
Rating
+6.5 V
-4 to 0 V
10 V
1960 mA
-8.2 to 113 mA
12.7 W
26 dBm
200 oC
260 oC
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Vd
Idq
Id_drive (Under RF
Drive)
Vg
Min
Typical
6
900
1200
-0.68
Max Units
V
mA
mA
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Idq = 900 mA, Vg = -0.68 V Typical.
Parameter
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power @ Saturation
Output Power @ 1dB Gain Compression
Output TOI
Noise Figure
Min
17.7
19
10
10
www.DataSheet.net/
29.5
38
Typical
23
12
15
32.5
31
41
7
Gain Temperature Coefficient
-0.023
Power Temperature Coefficient
-0.005
Max
19.7
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB
dB/°C
dB/°C
Preliminary Data Sheet: Rev E 04/27/2012
© 2012 TriQuint Semiconductor, Inc.
`
- 2 of 13 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number TGA4532-SM
Description K-Band Power Amplifier
Maker TriQuint Semiconductor
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