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TriQuint Semiconductor

TGA4600-EPU Datasheet Preview

TGA4600-EPU Datasheet

Low Noise Amplifier

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60GHz Low Noise Amplifier
Advance Product Information
October 28, 2003
TGA4600-EPU
Key Features
• Typical Frequency Range: 57 - 65 GHz
• 4 dB Nominal Noise Figure
• 13 dB Nominal Gain
• Bias 3.0 V, 41 mA
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 1.62 x 0.84 x 0.10 mm
(0.064 x 0.033 x 0.004 in)
RF Probe Data
Primary Applications
Bias Conditions: Vd = 3.0 V, Id =41 mA
15
10 GAIN
5
0
-5
-10www.DataSheet4U.com
-15
ORL
IRL
-20
-25
-30
56 57 58 59 60 61 62 63 64 65 66 67 68 69 70
Frequency (GHz)
Wireless LAN
Point-to-Point Radio
8
7
6
5
4
3
2
1
0
56 57 58 59 60 61 62 63 64 65 66 67 68 69 70
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com




TriQuint Semiconductor

TGA4600-EPU Datasheet Preview

TGA4600-EPU Datasheet

Low Noise Amplifier

No Preview Available !

Advance Product Information
October 28, 2003
TGA4600-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous W ave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
5V
-1 TO +0.5 V
200 mA
5 mA
15 dBm
0.39W
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ W hen operated at this bias condition with a base plate temperature of 700C, the median life is
1.0E+6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(Ta = 25 0C, Nominal)
SYMBOL
PARAMETER
VBVGD, Q1-Q3
VBVGS, Q3
VP, Q1,2,3
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Source
Pinch-off Voltage
MIN.
-30
-30
-1.0
TYP.
MAX.
-5
-5
-0.1
UNITS
V
V
V
Q1 is 100 um FET, Q2 is 100 um FET, Q3 is 210 um FET.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Part Number TGA4600-EPU
Description Low Noise Amplifier
Maker TriQuint Semiconductor
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