Full PDF Text Transcription for TGF2021-04-SD (Reference)
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TGF2021-04-SD. For precise diagrams, and layout, please refer to the original PDF.
TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Pe...
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sions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: • OTOI: 39.5 dBm • Noise Figure: 0.6dB • Gain: 16dB • P1dB: 26.5dBm • Input Return Loss: -8 dB • Output Return Loss: -18 dB • Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (Typical) 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Primary Applications • • • • Cellular Base Stations WiMAX Wireless Infrastructure Low Noise Amplifiers www.DataSheet.net/ Product Description The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost
TGF2021-04-SD Datasheet
