• Part: TGF2021-04-SD
  • Manufacturer: TriQuint Semiconductor
  • Size: 663.26 KB
Download TGF2021-04-SD Datasheet PDF
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TGF2021-04-SD Key Features

  • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance
  • OTOI: 39.5 dBm
  • Noise Figure: 0.6dB
  • Gain: 16dB
  • P1dB: 26.5dBm
  • Input Return Loss: -8 dB
  • Output Return Loss: -18 dB
  • Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (Typical)

TGF2021-04-SD Description

The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package. The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external ponents, this device is capable of 16 dB gain, 0.6dB noise figure, and 39.5 dBm output IP3.