TGM2635-CP - X-Band 100 W GaN Power Amplifier

TriQuint Semiconductor

TGM2635-CP Datasheet Preview — Preview of TGM2635-CP PDF

Datasheet Details

Part number	TGM2635-CP
Manufacturer	TriQuint Semiconductor
File Size	924.96 KB
Description	X-Band 100 W GaN Power Amplifier
Datasheet	TGM2635-CP-TriQuintSemiconductor.pdf

TGM2635-CP Product details

Description

TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) 8 to 0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85°C, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 50 Ω, 85°C , VD = 28 V, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 85°C, VSWR 3:1, VD = 28 V, Pulsed; PW = 100 us, DC = 10% M

Features

Frequency Range: 7.9.
11 GHz.
PSAT: 50 dBm (PIN = 28 dBm).
PAE: 35% (PIN = 28 dBm).
Large Signal Gain: 22 dB (PIN = 28 dBm).
Small Signal Gain: 26 dB.
Bias: VD = 28 V, IDQ = 1.3 A.
Package Dimensions: 19.05 x 19.05 x 4.52 mm.
Performance Under Pulsed Operation Functional Block Diagram.

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Published: Sep 27, 2016 |