Datasheet Summary
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Advance Data Sheet
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Functional Block Diagram
Vcc1 Vcc2
Features
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- InGaP HBT Technology High Efficiency: 39% @ 28dBm Capable of running as 0-bit PA in low bias mode to 28dBm Supports new chipsets with Vref@2.6V Low Leakage Current: <1uA Optimized for 50 ohm System Small 8-pin, 3x3mm module Excellent Rx band noise performance Lead-free 260°C RoHS pliant Full ESD Protection
RF In
Input Match
Output Match
RF Out
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Vmode
1st Stage PA
2nd Stage
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- Vref
1 bit Bias Control
Product Description
The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use...