TQPED Datasheet | TriQuint Semiconductor

Pre-Production Process 0.5 um E/D pHEMT Foundry Service Features Metal 2 Dielectric Metal 2 - 4um - - - - - Dielectric Metal 1 - 2um Metal 1 Metal 1 Dielectric MIM Metal NiCr Nitride N+ Pseudomorphic Channel Metal 0 Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor E-Mode / D-Mode pHEMT Semi-Insulating GaAs Substrate - - - - - - 0.5 um pHEMT Device Cross-Section .. E-Mode, 0.35 V, Vth D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates High Density Interconnects: - 2 Global - 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production TQPHT pHEMT and...