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TQPED - 100UA Gain Selectable Amplifier

Description

TriQuint’s TQPED process is based on our production-released 0.5 µm TQPHT process.

TQPED partners an E-Mode pHEMT device with our TQPHT D-Mode transistors to be the first foundry pHEMT process to integrate E-Mode and D-Mode transistors on the same wafer.

Features

  • Metal 2 Dielectric Metal 2 - 4um TQPED.
  • Dielectric Metal 1 - 2um Metal 1 Metal 1 Dielectric MIM Metal NiCr Nitride N+ Pseudomorphic Channel Metal 0 Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor E-Mode / D-Mode pHEMT Semi-Insulating GaAs Substrate.
  • 0.5 um pHEMT Device Cross-Section www. DataSheet4U. com E-Mode, 0.35 V, Vth D-Mode, -0.8 V Vp InGaAs Active Layer.

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Datasheet Details

Part number TQPED
Manufacturer TriQuint Semiconductor
File Size 128.69 KB
Description 100UA Gain Selectable Amplifier
Datasheet download datasheet TQPED Datasheet

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Full PDF Text Transcription

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Pre-Production Process 0.5 um E/D pHEMT Foundry Service Features Metal 2 Dielectric Metal 2 - 4um TQPED • • • • • Dielectric Metal 1 - 2um Metal 1 Metal 1 Dielectric MIM Metal NiCr Nitride N+ Pseudomorphic Channel Metal 0 Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor E-Mode / D-Mode pHEMT Semi-Insulating GaAs Substrate • • • • • • 0.5 um pHEMT Device Cross-Section www.DataSheet4U.com E-Mode, 0.35 V, Vth D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.
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