TQPHT Datasheet | TriQuint Semiconductor

Production Process 0.5 um pHEMT Foundry Service Features Metal 2 Dielectric Metal 1 Dielectric MIM Metal Metal 2 - 4um Dielectric Metal 1 - 2um - - - - - Metal 1 NiCr Isolation Implant Isolation Implant Nitride N+ Pseudomorphic Channel Metal 0 pHEMT MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor - - - - - - 0.5 um pHEMT Device Cross-Section .. D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates 17 V D-G Breakdown Voltage High Density Interconnects: - 2 Global - 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production 0.25 µm pHEMT and Passives Processes TOM3...