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TriQuint Semiconductor

WJA1001 Datasheet Preview

WJA1001 Datasheet

Active-Bias InGaP HBT Gain Block

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WJA1001
+5V Active-Bias InGaP HBT Gain Block
Product Features
50 – 3000 MHz
19 dB Gain @ 900MHz
+20 dBm P1dB @ 900MHz
+45 dBm OIP3 @ 900MHz
+5V Single Supply
Low current draw (100 mA)
Unconditionally stable
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-89 package
Applications
GSM, PCS, CDMA, WCDMA
WiMAX, WiBro
Repeaters, BTS Transceivers
RFID
Product Description
Functional Diagram
The WJA1001 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 900 MHz,
the WJA1001 typically provides 19 dB gain, +45 dBm OIP3,
and +20 dBm P1dB. The device is housed in a lead-
free/green/RoHS-compliant SOT-89 SMT package using a
NiPdAu plating to eliminate the possibility of tin whiskering.
GND
4
The WJA1001 consists of a Darlington-pair amplifier using
a high reliability InGaP/GaAs HBT process technology.
The amplifier has been optimized internally to offer very
high linearity performance at 1 GHz while drawing very
low current. The MMIC amplifier is internally matched to
50Ω and only requires DC-blocking capacitors and a bias
inductor for operation. An internal active bias is designed
to enable stable performance over temperature and allow
for operation directly from a +5V supply voltage.
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
WJA1001 is ideal for general purpose applications such as
LO buffering or amplification and pre-driver stages within
the 50 to 3000 MHz frequency range.
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
50
17.5
+39
88
Typ
900
19
12
14
+19.7
+44.5
5.4
5.0
100
Max
3000
20.5
108
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Typical Performance (3)
www.DataSheet.net/
Parameter Units
Frequency
MHz
S21 dB
200
19.6
Typical
500 900 1900
19.2 18.5 16.7
2100
16.4
S11 dB -13 -15 -18 -30 -26
S22 dB -22 -20 -15 -11 -12
Output P1dB dBm +20.4 +20.3 +19.7 +19.2 +18.1
Output IP3 (2) dBm +39.7 +39 +44 +34 +34
Noise Figure dB 4.8 5.0 5.4 6.1 6.4
3. Listed typical performance parameters measured on evaluation board.
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9009
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
80.6 °C / W
150 °C
Ordering Information
Part No.
WJA1001
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

WJA1001 Datasheet Preview

WJA1001 Datasheet

Active-Bias InGaP HBT Gain Block

No Preview Available !

WJA1001
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5V, Icc = 100 mA
Gainvs. Frequency
25
ReturnLoss vs. Frequency
0
10
-5
20 8
-10
15 -15 6
10
5
-40C +25C +85C
-20
-25
-30 S11 S22
4
2
0 -35 0
0 1000 2000 3000 0 1000 2000 3000 0
Frequency (MHz)
Frequency(MHz)
NFvs. Frequency
-40C +25C +85C
1000 2000
Frequency (MHz)
3000
OIP3 vs. Output Power
Frequency= 900MHz, T=25C
45
OIP3 vs. Frequency
Pout = 8dBm/tone
45
OIP3 vs. Vcc
Frequency= 900MHz, T= 25C
45
40 40 40
35 35 35
30 30
25 25
0 2 4 6 8 10 12 0
Output Power per tone(dBm)
-40C +25C +85C
1000
www.DataSheet.net/
2000
Frequency (MHz)
30
25
3000 4.7
4.8 4.9 5 5.1
Supply Voltage (V)
5.2
P1dBvs. Frequency
22
P1dBvs. Vcc
Frequency= 900MHz, T= 25C
22
Icc vs. Vcc
Frequency= 900MHz, T= 25C
120
20
18
16
14 -40C +25C +85C
20
18
16
14
110
100
90
80
70
12 12
60
0 1000 2000 3000 4.7 4.8 4.9 5 5.1 5.2 4.7 4.8 4.9 5 5.1 5.2
Frequency (MHz)
SupplyVoltage (V)
Supply Voltage (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number WJA1001
Description Active-Bias InGaP HBT Gain Block
Maker TriQuint Semiconductor
PDF Download

WJA1001 Datasheet PDF





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