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TriQuint Semiconductor

WJA1015 Datasheet Preview

WJA1015 Datasheet

Active-Bias InGaP HBT Gain Block

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WJA1015
+5V Active-Bias InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
Cascadable gain block
50 – 2300 MHz
15 dB Gain
+17 dBm P1dB
+37 dBm OIP3 @ 900MHz
Operates from +5V @ 65mA
Robust 1000V ESD, Class 1C
RoHS-compliant SOT-89 package
Applications
Wireless Infrastructure
General Purpose
CATV / FTTH
VHF / UHF Transmission
The WJA1015 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 900
MHz, the WJA1015 typically provides 15 dB gain, +37
dBm OIP3, and +17 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
The WJA1000 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
The MMIC amplifier is internally matched to 50Ω and only
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
directly from a +5V supply voltage.
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, PCS, and W-CDMA. The WJA1015 is ideal for
general purpose applications such as LO buffering, IF
amplification and pre-driver stages within the 50 to 2300
MHz frequency range.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
13.5
+32
54
Typ
900
14.8
13
18
+17
+37
+51
5
5
65
Max
2300
16.5
74
1. Test conditions: 25 ºC, Supply Voltage = +5V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of +6dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (3)
Parameter
Frequency
www.DataSheet.net/
S21
S11
S22
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
200
14.8
-13
-18
+18.9
+40.2
+51.7
4.7
Typical
500
14.7
-15
-18
+18.5
+38.7
+50.4
4.9
900
14.5
-17
-16
+17
+36.8
+51
5
1900
13.9
-19
-10
+15.1
+28.2
+37.6
5.5
2100
14.0
-20
-10
+14.1
+26.1
+35.1
5.6
3. Listed typical performance parameters measured on evaluation board.
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9028
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
83.8 °C / W
150 °C
Ordering Information
Part No.
WJA1015
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

WJA1015 Datasheet Preview

WJA1015 Datasheet

Active-Bias InGaP HBT Gain Block

No Preview Available !

WJA1015
+5V Active-Bias InGaP HBT Gain Block
.
16
14
12
10
8
0
45
Typical Device RF Performance
Supply Bias = +5 V, Icc = 65 mA
Gainvs. Frequency
-40C +25C +85C
500 1000 1500
Frequency(MHz)
2000
OIP3 vs. Output Power
0
-5
-10
-15
-20
-25
-30
2500 0
45
Return Loss
T= 25°C
S11 S22
500 1000 1500 2000
Frequency (MHz)
OIP3vs. Frequency
Pout=6 dBm/tone
10
9
8
7
6
5
4
3
2
2500 0
45
Noise Figure vs. Frequency
-40C +25C +85C
500 1000 1500 2000
Frequency(MHz)
OIP3 vs. Vcc
Freq = 900MHz
2500
40 40 40
35 35 35
30 30 30
25
0
55
50
45
40
35
30
0
2468
Output Power per tone(dBm)
OIP2 vs. Frequency
Pout=6 dBm/tone
25
10 0
20
18
16
14
12
500 1000
Frequency (MHz)
www.DataSheet.net/
P1dBvs. Frequency
1500
-40C +25C +85C
25
2000 4.7 4.8 4.9 5.0 5.1 5.2
Vcc (V)
P1dBvs. Vcc
Freq= 900MHz
20
18
16
14
12
10
500 1000 1500 2000 2500 0
Frequency (MHz)
10
500 1000 1500 2000 2500 4.7 4.8 4.9
5
Frequency(MHz)
Vcc (V)
Iccvs. Temperature
75 Vcc=+5V
Icc vs. Vcc
120
5.1 5.2
100
70
80
65
60
60
40
55 20
-50 -25 0 25 50 75 100 4.0
Temperature (°C)
-40C +25C +85C
4.5 5.0 5.5
Vcc (V)
6.0
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number WJA1015
Description Active-Bias InGaP HBT Gain Block
Maker TriQuint Semiconductor
PDF Download

WJA1015 Datasheet PDF






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