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TriQuint Semiconductor

WJA1020 Datasheet Preview

WJA1020 Datasheet

Active-Bias InGaP HBT Gain Block

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WJA1020
+5V Active-Bias InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
Cascadable gain block
50 – 4000 MHz
17 dB Gain @ 1.9GHz
+17 dBm P1dB @ 1.9GHz
+34 dBm OIP3 @ 1.9GHz
Operates from +5V @70mA
Robust 1000V ESD, Class 1C
RoHS-compliant SOT-89 package
Applications
Wireless Infrastructure
General Purpose
Cellular GSM, PCS, UMTS
W-CDMA, TD-SCDMA, WiMAX
The WJA1020 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 1.9 GHz,
the WJA1020 typically provides 17 dB gain, +34 dBm
OIP3, and +17 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
The WJA1020 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
The MMIC amplifier is internally matched to 50Ω and only
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
directly from a +5V supply voltage.
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
WJA1020 is ideal for general purpose applications such as
LO buffering, IF amplification and pre-driver stages within
the 50 to 4000 MHz frequency range.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
15.5
+32
59
Typ
1900
17.2
14
10
+16.9
+33.7
+41
5.8
5
70
Max
4000
18.5
79
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of 6 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (3)
Parameter
Frequencywww.DataSheet.net/
S21
S11
S22
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
500
18.8
-14
-18
+19.3
+34.8
+46
4.8
Typical
900
18.4
-16
-15
+18.7
+33.4
+44.2
5.1
1900
16.7
-35
-9
+16.9
+33.0
+41
5.8
2140
16.2
-32
-10
+16.4
+32.3
+37.8
6.1
2500
15.4
-27
-11
+15
+30.5
+35.6
6.4
3. Listed typical performance parameters measured on evaluation board.
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
83.8 °C / W
150 °C
Ordering Information
Part No.
WJA1020
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7Reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

WJA1020 Datasheet Preview

WJA1020 Datasheet

Active-Bias InGaP HBT Gain Block

No Preview Available !

WJA1020
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5 V, Icc = 70 mA
Gainvs. Frequency
20
Return Loss
T= 25°C
0
Noise Figure vs. Frequency
12
-5 11
18 10
-10
9
16 -15 8
-20 7
14
12
-40C +25C +85C
-25
-30
-35 S11 S22
6
5
4
3 -40C +25C +85C
10 -40 2
0
1000 2000 3000 4000 0
1000 2000 3000 4000 0
1000 2000 3000 4000
Frequency (MHz)
Frequency (MHz)
Frequency(MHz)
OIP3 vs. Output Power
36
OIP3vs. Frequency
Pout=6 dBm/tone
36
OIP3 vs. Vcc
Freq = 1900MHz
36
34 34 34
32 32 32
30 30 30
28 28 28
26 26
0 2 4 6 8 10 0
Output Power per tone (dBm)
OIP2vs. Frequency
Pout=6 dBm/tone
50
20
45 18
1000 2000
Frequency (MHz)
www.DataSheet.net/
P1dBvs. Frequency
26
3000 4.7 4.8 4.9 5.0 5.1 5.2
Vcc (V)
P1dBvs. Vcc
Freq= 1900MHz
20
18
40 16 16
35 14 14
30 12 12
-40C +25C +85C
25 10 10
0
1000
2000
3000 0
1000 2000 3000 4000 4.7 4.8 4.9 5.0 5.1 5.2
Frequency (MHz)
Frequency(MHz)
Vcc (V)
Iccvs. Temperature
Vcc= +5V
85
Icc vs. Vcc
Freq = 1900MHz
120
80
75
70
65
-50 -25
0
25 50
Temperature (°C)
100
80
60
40
20
75 100 4.0
-40C +25C +85C
4.5 5.0 5.5
Vcc (V)
6.0
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number WJA1020
Description Active-Bias InGaP HBT Gain Block
Maker TriQuint Semiconductor
PDF Download

WJA1020 Datasheet PDF






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