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TriQuint Semiconductor

WJA1030 Datasheet Preview

WJA1030 Datasheet

+5V Active-Bias InGaP HBT Gain Block

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WJA1030
+5V Active-Bias InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
Cascadable gain block
50 – 4000 MHz
15 dB Gain @ 1.9GHz
The WJA1030 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 1.9 GHz,
the WJA1030 typically provides 15 dB gain, +37 dBm
OIP3, and +18 dBm P1dB. The device is housed in a
+18 dBm P1dB @ 1.9GHz
+37 dBm OIP3 @ 1.9GHz
Operates from +5V @ 80mA
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
0.2dB gain flatness from 0.3-2.5GHz The WJA1030 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
Robust 1000V ESD, Class 1C The MMIC amplifier is internally matched to 50Ω and only
RoHS-compliant SOT-89 package requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
Applications
resistor is not required allowing the device to be biased
directly from a +5V supply voltage.
Wireless Infrastructure
General Purpose
Cellular GSM, PCS, UMTS
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
W-CDMA, TD-SCDMA, WiMAX WJA1030 is ideal for general purpose applications such as
LO buffering, IF amplification and pre-driver stages within
the 50 to 4000 MHz frequency range.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
13.2
+34
71
Typ
1900
14.9
12
16
+18.3
+37
+44
6.1
5
80
Max
4000
16.2
91
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System.. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of 3 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (3)
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
500
14.4
-13
-16
+19.4
+37.9
+49.4
5.3
Typical
900 1900 2140
14.4 14.4 14.4
-15 -30 -36
-19 -13 -12
+19.3 +18.3 +17.5
+37 +36.6 +36.3
+48.3 +44 +41.4
5.5 6.1 6.3
2500
14.3
-33
-13
+16
+33.9
+39.2
6.5
3. Listed typical performance parameters measured on evaluation board.
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9028
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
80.6 °C / W
150 °C
Ordering Information
Part No.
WJA1030
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 4 June 2011




TriQuint Semiconductor

WJA1030 Datasheet Preview

WJA1030 Datasheet

+5V Active-Bias InGaP HBT Gain Block

No Preview Available !

WJA1030
+5V Active-Bias InGaP HBT Gain Block
16
14
12
10
8
6
0
38
36
34
32
30
28
26
0
55
50
45
40
35
30
0
Typical Evaluation Board RF Performance
Supply Bias = +5 V, Icc = 80 mA
Gainvs. Frequency
-40C +25C +85C
1000 2000 3000
Frequency (MHz)
OIP3vs. Output Power
Freq= 1900MHz
0
-10
-20
-30
-40
-50
4000 0
50
45
40
35
Return Loss
T= 25°C
S11 S22
1000 2000 3000
Frequency (MHz)
OIP3 vs. Frequency
Pout=3 dBm/tone
12
11
10
9
8
7
6
5
4
3
2
4000 0
38
36
34
32
Noise Figure vs. Frequency
-40C +25C +85C
1000 2000
Frequency(MHz)
OIP3 vs. Vcc
Freq= 1900MHz
3000
30 30
2468
Output Power per tone(dBm)
OIP2vs. Frequency
Pout=3 dBm/tone
25
20
10 0
20
-40C +25C +85C
1000 2000
Frequency (MHz)
3000
P1dBvs. Frequency
28
26
4000 4.7
20
4.8 4.9 5.0
Vcc (V)
P1dBvs. Vcc
Freq= 1900MHz
5.1
18 18
16 16
14 14
1000 2000
Frequency (MHz)
85
12
10
3000 0
Iccvs. Temperature
Vcc= +5V
-40C +25C +85C
1000 2000 3000
Frequency(MHz)
120
12
10
4000 4.7
Icc vs. Vcc
4.8
100
80
80
75
60
70
40
65 20
-50 -25 0 25 50 75 100 4.0
Temperature (°C)
-40C +25C +85C
4.5 5.0 5.5
Vcc (V)
4.9 5.0
Vcc (V)
6.0
5.1
4000
5.2
5.2
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 June 2011


Part Number WJA1030
Description +5V Active-Bias InGaP HBT Gain Block
Maker TriQuint Semiconductor
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WJA1030 Datasheet PDF





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