Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- Fast-Recovery body diode.
- Extremely Low Reverse Recovery Charge.
- 650V @TJ = 150 ā.
- Typ. RDS(on) = 60mĪ©.
- Ultra Low gate charge (typ. Qg = 170nC).
- 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25ā) -Continuous (TC = 100ā)
Drain Current.
- Pulsed
(Note 1)
Gate-Source voltage
Single P.
TSA60R070SFD-Truesemi.pdf
