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TSK60R190S1 Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSK60R190S1
Manufacturer Truesemi
File Size 859.81 KB
Description N-Channel MOSFET
Download TSK60R190S1 Download (PDF)

General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Overview

TSK60R190S1 600V 20A N-Channel SJ-MOSFET TSK60R190S1 600V 20A N-Channel.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.16Ω.
  • Ultra Low gate charge (typ. Qg = 70nC).
  • 100% avalanche tested TO-247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche C.

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