TSP10N60S - N-Channel MOSFET

Truesemi

The TSP10N60S by Truesemi is a N-Channel MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

TSP10N60S N-Channel MOSFET by Truesemi - Datasheet Preview — Official preview page of the **TSP10N60S** N-Channel MOSFET datasheet (Truesemi).

Datasheet Details

Part number	TSP10N60S
Manufacturer	Truesemi
File Size	934.89 KB
Description	N-Channel MOSFET
Datasheet	TSP10N60S-Truesemi.pdf
Additional preview pages of the TSP10N60S datasheet.

TSP10N60S Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.42Ω.
Ultra Low Gate Charge (typ. Qg = 35nC).
100% avalanche tested.
Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB10N60S 9.5.
8.
IDM Drain Current - Pulsed (Note 1) 40.
VGSS Gate-Source voltage EAS.

📁 TSP10N60S Similar Datasheet

TSP10N60C - 600V Heatsink N-Channel Type Power MOSFET (Thinki Semiconductor)
TSP10H200S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10H45S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10H60S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10U100S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10U120S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10U45S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP10U60S - Trench Schottky Rectifier (Taiwan Semiconductor)

Other Datasheets by Truesemi

TSP10N60M - 600V N-Channel MOSFET
TSP10N65M - N-Channel MOSFET
TSP11N60S - N-Channel MOSFET
TSP12N60M - 600V N-Channel MOSFET
TSP12N60MS - N-Channel MOSFET
TSP12N65M - N-Channel MOSFET

Published: Apr 12, 2017 |