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TSP2N60M Datasheet Preview

TSP2N60M Datasheet

600V N-Channel MOSFET

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TSP2N60M / TSF2N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 2.0A, 600V, RDS(on) = 5.00@VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GDS
TO-220
GD S
TO-220F
◀▲
G
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSP2N60M TSF2N60M
600
2.0 2.0*
1.35 1.35 *
8 8*
30
130
5.55
4.5
55.5 23.6
0.44 0.19
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP2N60M
2.25
0.5
62.5
TSF2N60M
5.3
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W




Truesemi

TSP2N60M Datasheet Preview

TSP2N60M Datasheet

600V N-Channel MOSFET

No Preview Available !

TSP2N60M / TSF2N60M
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
YFS Forward Transconductance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 1.0 A
VDS = 20V, ID = 1.0 A
2.0 --
-- 4.1
1.0 3.0
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 200
-- 20
-- 4
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 2.0A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
25
25
30
9
1.5
4.0
--
--
1
10
100
-100
4.0
5.0
-
--
--
--
--
--
--
--
-
--
--
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 2.0
-- -- 8.0
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.0 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 2.0 A,
-- 230
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/s
(Note 4) --
1.0
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 60 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Starting TJ = 25°C
3. ISD 2.0 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
C


Part Number TSP2N60M
Description 600V N-Channel MOSFET
Maker Truesemi
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