TSP830M Datasheet - Truesemi

N-Channel MOSFET

TSP830M Features

* 5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSP830M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP830M Datasheet (346.60 KB)

TSP830M Datasheet Preview — Preview of TSP830M PDF

Datasheet Details

Part number:

TSP830M

Manufacturer:

Truesemi

File Size:

346.60 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSP80R1K3S1 N-Channel MOSFET (Truesemi)

TSP80R240S1 N-Channel MOSFET (Truesemi)

TSP80R380S1 N-Channel MOSFET (Truesemi)

TSP80R500S1 N-Channel MOSFET (Truesemi)

TSP80R600S1 N-Channel MOSFET (Truesemi)

TSP840M N-Channel MOSFET (Truesemi)

TSP8A100S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP8N60M 600V N-Channel MOSFET (Truesemi)

TSP8N65M N-Channel MOSFET (Truesemi)

TSP058A BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)

TAGS

TSP830M N-Channel MOSFET Truesemi

Image Gallery

TSP830M Features

TSP830M General Description

Datasheet Details

File Size:

Description:

TSP830M Distributor