TSP830M - N-Channel MOSFET

Name: TSP830M
SKU: TSP830M-1108529

Truesemi

The TSP830M by Truesemi is a N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TSP830M
Manufacturer	Truesemi
File Size	346.60 KB
Description	N-Channel MOSFET
Datasheet	TSP830M-Truesemi.pdf
Additional preview pages of the TSP830M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

5.0A,500V,Max. RDS(on)=1.50 Ω @ VGS =10V.
Low gate charge(typical 20nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

📁 TSP830M Similar Datasheet

TSP8A100S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP058A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058SC - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP064AL - LOW CAPACITANCE THYRISTOR (FCI)

Other Datasheets by Truesemi

Published: Apr 12, 2017 |