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4946. For precise diagrams, and layout, please refer to the original PDF.
Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID FEATURES RDS(on) (mΩ) Max 52 @ VGS = 10V P ●Supe...
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ODUCT SUMMARY VDSS ID FEATURES RDS(on) (mΩ) Max 52 @ VGS = 10V P ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD Limit 60 ± 20 5.0 26 3.1 2.0 1.2 Unit V V A A A W TA=25ºC TA=75ºC Avalanche Energy with Single Pulse L=0.
4946 Datasheet
