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2016 Datasheet - Tuofeng Semiconductor

N-Channel Enhancement Mode Field Effect Transistor

2016 Features

* VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C

2016 Datasheet (190.59 KB)

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Datasheet Details

Part number:

2016

Manufacturer:

Tuofeng Semiconductor

File Size:

190.59 KB

Description:

N-channel enhancement mode field effect transistor.

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2016 N-Channel Enhancement Mode Field Effect Transistor Tuofeng Semiconductor

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