2016 - N-Channel Enhancement Mode Field Effect Transistor

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Tuofeng Semiconductor

Part number	2016
Manufacturer	Tuofeng Semiconductor
File Size	190.59 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	2016 Datasheet
Additional preview pages of the 2016 datasheet.

The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 4.2 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter M.

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Published: Aug 28, 2016 |