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Tuofeng Semiconductor

4407 Datasheet Preview

4407 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
P-Channel Enhancement-Mode MOSFET (-30V, -12A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
13 @ VGS = -20V ,ID=-10A
-30V -12A
20 @ VGS = -10V ,ID=-10A
28 @ VGS = -5V ,ID=-10A
Features
· Advanced Trench Process Technology
· High Density Cell Design for Ultra Low On-Resistance
· Lead free product is acquired
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current @TA=25oC
Parameter
IDM Drain Current (Pulsed) a
IAR Avalanche Current
EAR Repetitive Avalanche Energy L=0.3mH
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
IS Maximum Diode Forward Current
Tj, Tstg
RqJA
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)b
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Ratings
-30
±20
-10
-60
30
135
3
2.1
-2.1
-55 to +150
50
Units
V
V
A
A
A
mJ
W
A
°C
°C/W
1




Tuofeng Semiconductor

4407 Datasheet Preview

4407 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
· Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
IGSS Gate-Body Leakage Current
· On Characteristicsc
VGS(th)
Gate Threshold Voltage
IDS(on)
On State Drain Current
VGS=±25V, VDS=0V
VDS=VGS, ID=-250uA
VDS=-5V, VGS=-10V
RDS(on) Drain-Source On-State Resistance
gFS Forward Transconductance
· Dynamic Characteristics d
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-6A
VDS=-10V, ID=-5A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
· Switching Characteristicsd
VDS=-15V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
tf Turn-off Fall Time
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDS=-15V, ID=-12A, VGS=-10V
VDD=-15V, RL=1.25W,
VGS=-10V, RG=3W
IDS=-12A, dI/ dt=100A/ uS
· Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1A
IS Drain-Source Diode Forward Current
Note: Pulse Test: Pulse Width £300us, Duty Cycle£2%
Min. Typ. Max. Unit
-30 -
--
-V
-1
uA
- - ±100 nA
-1.0 -
60 -
-3.0 V
-A
- - 14 mW
- - 20
- 26 -
S
- 2076 2500
- 503 -
pF
- 302 423
1 2 3W
- 37.2 -
- 7 - nC
- 10.4 -
- 12.4 -
- 8.2 -
- 25.6 -
nS
- 12 -
- 33 40 nS
- 23 - nC
- - -1 V
- - -4.2 A
2


Part Number 4407
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Tuofeng Semiconductor
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4407 Datasheet PDF






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