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Shenzhen Tuofeng Semiconductor Technology co., LTD
N-Channel Enhancement-Mode MOSFET (30V, 10A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
30V 10A
13.5 @ VGS = 10V ,ID=10A 20 @ VGS = 4.5V,ID=5A
4410
Features
· Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · Surface mount Package
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol VDS VGS
ID
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC
IDM Drain Current (Pulsed) a PD Total Power Dissipation @TA=25oC Tj, Tstg Operating Junction and Storage Temperature Range RqJA Thermal Resistance Junction to Ambient
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
4410 Datasheet
