4410 - N-Channel MOSFET

Tuofeng Semiconductor

Datasheet Details

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
Surface mount Package.
SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC IDM Drain Current (Pulsed) a PD Total Power Dissipation @TA=25oC Tj, Tstg Operating Junction and Storage Temperature Range RqJA Thermal Resistance Junction to Ambient.

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Published: Aug 28, 2016 |