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4616 Tuofeng Semiconductor MOSFET

Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 Product Summary N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V) P-Channel -30V -7A (VGS=-10V) RDS(ON) < 22mΩ (VGS=-10V) < 40mΩ (VGS=-4.5V) SOIC-8 D2 D1 Top View S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 S2 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-cha...
Features 1 of 9 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V Min Typ Max Units 30 V 1 µA IGSS VGS(th) ID(ON) Gate-...

Datasheet PDF File 4616 Datasheet - 471.91KB

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