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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604
20V Complementary MOSFET
Product Summary
N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=2.5V) < 100mΩ (VGS=1.8V)
P-Channel -20V
-2.5A (VGS=-4.5V) RDS(ON) < 75mΩ (VGS=-4.5V) < 105mΩ (VGS =-2.5V) < 180mΩ (VGS=-1.8V)
Top View
D1 D2
G1 1 S2 2 G2 3
6 D1 5 S1 4 D2
G1 G2
S1 S2
n-channel
p-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Max n-channel 20 ±8
Continuous Drain Current
TA=25°C
Pulsed Drain Current C
ID 3.4 IDM 13
Max p-channel -20 ±8
-2.5
-13
Power Dissipation B TA=25°C Junction and Storage Temperature Range
PD TJ, TSTG
1.1 1.