9926B - Dual N-Channel MOSFET

Tuofeng Semiconductor

Key Features

6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient.
Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady St.

9926B dual n-channel mosfet by Tuofeng Semiconductor - Datasheet Preview

Datasheet Details

Part number	9926B
Manufacturer	Tuofeng Semiconductor
File Size	309.08 KB
Description	Dual N-Channel MOSFET
Datasheet	9926B Datasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady State * Surface Mounted on 1" X 1"FR4 Board. Symbol RthJA RthJF Typ 50 80 30 Max Unit 62.5 100 /W 40 Shenzhen Tuofeng Semiconductor Technology Co.