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TF3420 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

This device is suitable for use as a uni-directional or bi-directional load switch.

Key Features

  • VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum 20 ±12 6 25 1.4 -55 to 150.

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Datasheet Details

Part number TF3420
Manufacturer Tuofeng Semiconductor
File Size 375.63 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet TF3420 Datasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF3420 N-Channel Enhancement Mode Field Effect Transistor General Description The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product TF3420 is Pb-free Features VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.