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MA4ST082 - Surface Mount Hyperabrupt Wide-Band Tuning Varactors

Description

The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques.

These diodes have thermal oxide passivation, and feature very high capacitance ratio and quality factor.

Features

  • q q q q q q MA4ST079 thru 083 V3.00 SOT-23 q q Low Cost Very High Capacitance Ratio from 1 to 8 Volts Surface Mount Package High Quality Factor Useful for Battery.

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Surface Mount Hyperabrupt Wide-Band Tuning Varactors Features q q q q q q MA4ST079 thru 083 V3.00 SOT-23 q q Low Cost Very High Capacitance Ratio from 1 to 8 Volts Surface Mount Package High Quality Factor Useful for Battery Applications SPC Monitored Ion Implantation for Excellent C-V Repeatability Singles and Common Cathode Pairs Available in Tape and Reel Description The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques. These diodes have thermal oxide passivation, and feature very high capacitance ratio and quality factor. They are well suited for use from the sub-HF through UHF frequency range. The standard capacitance tolerance is ±10%, with tighter tolerances available.
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