MA4SW610B-1 Datasheet | Tyco Electronics

Features n n n V 1.00 MA4SW510B-1 Layout Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 d B Insertion Loss, 35 d B Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this bination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved. Nominal Chip Dimensions Chip Dimensions (µm) X 3370 Pad Dimensions (µm) X 400 125 Y 3120 Y 125 125 Chip Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 m A) Bias Current (Forward) Applied Voltage (Reverse) Value -65 °C to +125 °C -65 °C to +150 °C + 30 d Bm +/- 40 m A 15 V RF DC 1. Exceeding any of these values may result in permanent damage J1 J2 B2 J3 B3 J4 B4 J5 B5 J6 B6 J7 B7 Pad Locations (µm) X Y 0 0 -1535 +300 -1535 +1000 -1535 +1800 -1535 +2500 -750 +2820 -50 +2820 +750 +2820 +1450 +2820 +1535 +1800 +1535 +1100 +1535 +300 +900 0 Pad Locations Relative to J1 SP6T PIN Diode Switch with Integrated Bias Network V 1.00 Electrical Specifications @ TA = 25 °C, +/- 10 m A Bias Current (On-Wafer Measurements) Parameters Insertion Loss Frequency 6 GHz 12 GHz 18 GHz Minimum 43 35 30 - Typical 1.0 1.3 1.9 49 43 39 18 20 16 19 22 20 80 Maximum 1.4 2.0 2.9 -...