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MAAPGM0042-DIE Datasheet Preview

MAAPGM0042-DIE Datasheet

X/Ku-Band Power Amplifier

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RO-P-DS-3037- -
1.2Wwww.DataSheet4U.com X/Ku-Band Power Amplifier
11.5-16.0 GHz
Preliminary Information
Features
11.5-16.0 GHz Operation
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG® MESFET Process
11.5-16.0 GHz GaAs MMIC Amplifier
Primary Applications
Point-to-Point Radio
SatCom
Radio Location
Description
The MAAPGM0042-DIE is a 3-stage 1.2 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG®) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50 , VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
11.5-16.0
GHz
Output Power
Power Added Efficiency
POUT
PAE
31
30
dBm
%
1-dB Compression Point
P1dB
28
dBm
Small Signal Gain
G
20
dB
VSWR
VSWR
1.9:1
Gate Current
Drain Current
Output Third Order Intercept
IGG
IDD
OTOI
<5
< 600
35
mA
mA
dBm
Noise Figure
NF
10
dB
2nd Harmonic
2f
-27 dBc
3rd Harmonic
3f
-35 dBc
1. TB = MMIC Base Temperature




Tyco Electronics

MAAPGM0042-DIE Datasheet Preview

MAAPGM0042-DIE Datasheet

X/Ku-Band Power Amplifier

No Preview Available !

1.2W X/Ku-Band Power Amplifier
RO-P-DS-3037 - - 2/6
MAAPGM0042-DIE
Maximum Operating Conditions 1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
PIN
VDD
VGG
IDQ
PDISS
TJ
TSTG
Absolute Maximum
23.0
+12.0
-3.0
660
4.4
180
-55 to +150
Units
dBm
V
V
mA
W
°C
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
Input Power
Junction Temperature
MMIC Base Temperature
Symbol
VDD
VGG
PIN
TJ
TB
Min
4.0
-2.5
Typ Max Unit
8.0 10.0
V
-2.0 -1.5
V
18.0
20.0
dBm
150 °C
Note 2
°C
2. Maximum MMIC Base Temperature = 150°C — 18.2 °C/W * VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
„ North America: Tel. (800) 366-2266
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.


Part Number MAAPGM0042-DIE
Description X/Ku-Band Power Amplifier
Maker Tyco Electronics
Total Page 6 Pages
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