MAAPGM0062-DIE Datasheet | Tyco Electronics

.. 9.5-12.0 GHZ, 4W Power Amplifier MAAPGM0062 - DIE RO-P-DS-3095 -Preliminary Datasheet Features - 4 Watt Saturated Output Power Level - MSAG™ Process - Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0062-Die is a 3-stage power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - Point-to-Point - Radar Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, IDQ = 0.9 A, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB pression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current 1. 1 TB = MMIC Base Temperature Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD Typical 9.5-12.0 36 33 35 23 1.6:1 1.8:1 < 20 < 1.5 mA A Units GHz dBm % dBm dB M/A- Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice....