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MAAPSS0107 - RF Power Amplifier IC

Description

M/A-COM’s MAAPSS0107 is a DECT power amplifier based on M/A-COM’s Self Aligned MSAG MESFET Process.

This product is designed for use in 3.6 V DECT handsets and base stations.

Features

  • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation Self-Aligned MSAG ® - Lite MESFET Process Lead-Free 8 Pin Full Downset MSOP Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Reflow Compatible RoHS.
  • Compliant Version of MA02206GJ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RoHS Compliant MAAPSS0107 V1 Functional Schematic Pin 1 Pin 8 3.6 V, 0.5 W, RF Power Amplifier IC for DECT 1800 - 2000 MHz Features • • • • • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation Self-Aligned MSAG ® - Lite MESFET Process Lead-Free 8 Pin Full Downset MSOP Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Reflow Compatible RoHS* Compliant Version of MA02206GJ Description M/A-COM’s MAAPSS0107 is a DECT power amplifier based on M/A-COM’s Self Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations.
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