Datasheet Summary
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SEMICONDUCTOR TECHNICAL DATA
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The RF Line
Microwave Pulse Power Transistor
Designed for Class B and C mon base amplifier applications in short pulse TACAN, IFF, and DME transmitters.
- Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB
- 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
- Industry Standard Package
- Nitride Passivated
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Internal Input Matching for Broadband Operation
150 W PEAK, 960- 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating...
