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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166C/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF166C
20 W, 500 MHz MOSFET BROADBAND RF POWER FETs
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W Gain = 13.5 dB Efficiency = 50% • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Excellent Thermal Stability, Ideally Suited for Class A Operation • Low Crss — 4.
MRF166C Datasheet
