Click to expand full text
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166W/D
The RF MOSFET Line Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
• Push–Pull Configuration Reduces Even Numbered Harmonics • Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 40 Watts Gain = 14 dB Efficiency = 50% • Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss — 4.0 pF @ VDS = 28 Volts Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
MRF166W Datasheet
