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PH1516-10 - Wireless Bipolar Power Transistor

Key Features

  • l l l l l l 1OW PHl516-10 v2.00 IzS Designed for Cellular Base Station.

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Full PDF Text Transcription for PH1516-10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PH1516-10. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz Features l l l l l l 1OW PHl516-10 v2.00 IzS Designed for Cellular Base Stati...

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s l l l l l l 1OW PHl516-10 v2.00 IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Absolute Maximum Ratings at 25°C UNLESS UTHERVISE NOTED, TOLERANCES ARE INCHES <umERS MO5 t13Mn, Electrical Characteristics at 25°C DC Forward Current Gain Power Gain Collector Eff iciency Input Return Loss Load Mismatch Tolerance 3rd Order IMD h FE GP % 15 10 40 10 120 3.011 -30 dB % dB dBc V,,=5 V, I,=1 A V,,=25 V,,=25 V,,=25 V,,=25 V,,=25 V, I,,=100 V, I,

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