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QM0008G - N-Ch 100V Fast Switching MOSFETs

Description

The QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available BVDSS 100V RDSON 310mΩ ID 2.2A.

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Datasheet Details

Part number QM0008G
Manufacturer UBIQ
File Size 322.78 KB
Description N-Ch 100V Fast Switching MOSFETs
Datasheet download datasheet QM0008G Datasheet

Full PDF Text Transcription

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QM0008G N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM0008G meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available BVDSS 100V RDSON 310mΩ ID 2.
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