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QM0008J Datasheet Preview

QM0008J Datasheet

N-Ch 100V Fast Switching MOSFETs

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QM0008J
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0008J is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM0008J meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
100V
RDSON
310m
ID
2.2A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT89 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
GD S
Rating
100
±20
2.2
1.7
5.5
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
85
36
Unit
/W
/W
Rev A.01 D012511
1




UBIQ

QM0008J Datasheet Preview

QM0008J Datasheet

N-Ch 100V Fast Switching MOSFETs

No Preview Available !

QM0008J
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=2A
VGS=4.5V , ID=1A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=25
VGS=±20V , VDS=0V
VDS=5V , ID=2A
VDS=0V , VGS=0V , f=1MHz
VDS=50V , VGS=10V , ID=2A
VDD=50V , VGS=10V , RG=3.3Ω
ID=2A
VDS=15V , VGS=0V , f=1MHz
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.067
260
270
1.5
-4.2
---
---
---
5.4
2.8
9.1
2
1.4
2
21.6
11.2
18.8
508
29
16.4
Max.
---
---
310
320
2.5
---
1
5
±100
---
5.6
12.7
2.8
2.0
4
39
22
37.6
711
41
33
Unit
V
V/
mΩ
V
mV/
uA
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=2A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
17.5
14
Max.
2.2
5.5
1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM0008J
Description N-Ch 100V Fast Switching MOSFETs
Maker UBIQ
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QM0008J Datasheet PDF






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